Temperature Dependence of Raman Scattering in Monocrystals and Epitaxial Thin Films of ZnSe
p.123
p.123
Low Temperature Photoluminescence of ZnSe Strained Thin Layers Grown on GaAs by MBE
p.127
p.127
Computer Simulation of Interdiffusion Processes on II-VI Superlattices
p.131
p.131
MBE Growth and Properties of Si/GeSi Superlattices on Si (111)
p.135
p.135
The Pair-Doped Delta-Superlattice: An Inner Probe to Measure Monolayer Doping Fluctuations in Semiconductors
p.139
p.139
Eu2+ and Sm2+ Ions as a Photoluminescent Probe in Epitaxial CaF2 Films on Semiconductors
p.151
p.151
Low-Temperature Anomalies of 2D Electrons n-AlxGa1-xAs/GaAs Transfer Phenomena
p.155
p.155
In Situ REM Study of Silicon Surface during MBE Processes
p.159
p.159
Investigation of Sublimation Process of (111) and (100)CdTe Films by Rheed Intensity Oscillation
p.163
p.163
The Pair-Doped Delta-Superlattice: An Inner Probe to Measure Monolayer Doping Fluctuations in Semiconductors
Abstract:
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Periodical:
Materials Science Forum (Volume 69)
Pages:
139-150
Citation:
Online since:
January 1991
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Сopyright:
© 1991 Trans Tech Publications Ltd. All Rights Reserved
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