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Temperature Dependence of Raman Scattering in Monocrystals and Epitaxial Thin Films of ZnSe
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Low Temperature Photoluminescence of ZnSe Strained Thin Layers Grown on GaAs by MBE
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Computer Simulation of Interdiffusion Processes on II-VI Superlattices
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MBE Growth and Properties of Si/GeSi Superlattices on Si (111)
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The Pair-Doped Delta-Superlattice: An Inner Probe to Measure Monolayer Doping Fluctuations in Semiconductors
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Eu²⁺ and Sm²⁺ Ions as a Photoluminescent Probe in Epitaxial CaF₂ Films on Semiconductors
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HomeMaterials Science ForumMaterials Science Forum Vol. 69Computer Simulation of Interdiffusion Processes on...

Computer Simulation of Interdiffusion Processes on II-VI Superlattices

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Molecular Beam Epitaxy

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Periodical:

Materials Science Forum (Volume 69)

Pages:

131-134

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.69.131

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Online since:

January 1991

Authors:

V.A. Poteshkov, Y.M. Shchekochihin, E.B. Tsaviva

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© 1991 Trans Tech Publications Ltd. All Rights Reserved

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