The Dependence of Schottky Barrier Height of Metal-Semiconductor Contacts on the Ratio of Interfacial Area Occupied by Different Metal Components
p.101
p.101
MBE Grown Planar Doped Barrier Diodes for Microwave Purposes
p.107
p.107
Interface Symmetry and Heteroepitaxy
p.111
p.111
MBE Growth and Investigation of Heteroepitaxial CdTe, ZnTe Layers and CdTe-ZnTe Superlattices
p.115
p.115
Raman Scattering by Phonons in Short-Period GaAs/AlAs Superlattices
p.119
p.119
Temperature Dependence of Raman Scattering in Monocrystals and Epitaxial Thin Films of ZnSe
p.123
p.123
Low Temperature Photoluminescence of ZnSe Strained Thin Layers Grown on GaAs by MBE
p.127
p.127
Computer Simulation of Interdiffusion Processes on II-VI Superlattices
p.131
p.131
MBE Growth and Properties of Si/GeSi Superlattices on Si (111)
p.135
p.135
Raman Scattering by Phonons in Short-Period GaAs/AlAs Superlattices
Abstract:
Info:
Periodical:
Materials Science Forum (Volume 69)
Main Theme:
Edited by:
G. Minchev and L. Pramatarova
Pages:
119-122
DOI:
10.4028/www.scientific.net/MSF.69.119
Citation:
I. Gregora et al., "Raman Scattering by Phonons in Short-Period GaAs/AlAs Superlattices ", Materials Science Forum, Vol. 69, pp. 119-122, 1991
Online since:
January 1991
Authors:
Price:
$35.00
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