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The Dependence of Schottky Barrier Height of Metal-Semiconductor Contacts on the Ratio of Interfacial Area Occupied by Different Metal Components
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MBE Grown Planar Doped Barrier Diodes for Microwave Purposes
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Interface Symmetry and Heteroepitaxy
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MBE Growth and Investigation of Heteroepitaxial CdTe, ZnTe Layers and CdTe-ZnTe Superlattices
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Raman Scattering by Phonons in Short-Period GaAs/AlAs Superlattices
p.119

Temperature Dependence of Raman Scattering in Monocrystals and Epitaxial Thin Films of ZnSe
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Low Temperature Photoluminescence of ZnSe Strained Thin Layers Grown on GaAs by MBE
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Computer Simulation of Interdiffusion Processes on II-VI Superlattices
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HomeMaterials Science ForumMolecular Beam EpitaxyRaman Scattering by Phonons in Short-Period...

Raman Scattering by Phonons in Short-Period GaAs/AlAs Superlattices

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Periodical:

Materials Science Forum (Volume 69)

Main Theme:

Molecular Beam Epitaxy

Edited by:

G. Minchev and L. Pramatarova

Pages:

119-122

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.69.119

Citation:

I. Gregora et al., "Raman Scattering by Phonons in Short-Period GaAs/AlAs Superlattices ", Materials Science Forum, Vol. 69, pp. 119-122, 1991

Online since:

January 1991

Authors:

I. Gregora, V. Vorlícek, K. Kokesová, K. Ploog

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