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HomeMaterials Science ForumMaterials Science Forum Vol. 69

Materials Science Forum Vol. 69

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.69

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Table of Contents

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Paper Title Page

Preparation and Characterizations of High Quality InGaAs/GaAs Strained Multi-Quantum Wells Grown by MBE

Authors: J.M. Zhou, Hao Qing Hou, Y. Huang

1

Influence of Growth Parameters on the Surface Morphology of MBE Grown GaAs and Al_xGa_1-xAs Layers

Authors: S.V. Ivanov, P.S. Kop'ev, N.N. Ledentsov

9

Optical Switching of Double-Barrier Resonant Tunneling AlGaAs/GaAs Diode

Authors: S.V. Ivanov, P.S. Kop'ev, V.I. Korol'kov, N.N. Ledentsov, M.E. Lutsenko, B.Ya. Mel'tser, T.S. Tabarov, S.V. Shaposhnikov

13

Sb Delta-Type Doping in Si-MBE Superlattices

Authors: Alexander I. Nikiforov, B.Z. Kanter, S.I. Stenin, S.V. Rubanov

17

Molecular Beam Heteroepitaxy on Silicon Substrates

Authors: A. Zehe

21

MBE Growth, Properties and Applications of Epitaxial Dielectric Fluoride Films on Semiconductors

Authors: N.S. Sokolov

29

Evaporation and Incorporation of Gallium Atoms and Ions during Si MBE with a Sublimating Source

Authors: A. Kozhukhov

37

Comparison of Growth Kinetics and Source Material Utilization Efficiency in MBE under Conventional and Ale Conditions

Authors: J. Aarik, J. Lembra, H. Siimon

41

PED Mechanism Studied by Moleculardynamic Computer Simulation

Authors: B. Fritzsch, B. Wolf, A. Zehe

45

Growth of Aluminum and Copper on Silicon by Molecular Beam Epitaxy

Authors: M. Büschel, T. Gantz, A. Thomas, A. Zehe

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