Paper Titles

Preparation and Characterizations of High Quality InGaAs/GaAs Strained Multi-Quantum Wells Grown by MBE
p.1

Influence of Growth Parameters on the Surface Morphology of MBE Grown GaAs and Al_xGa_1-xAs Layers
p.9

Optical Switching of Double-Barrier Resonant Tunneling AlGaAs/GaAs Diode
p.13

Sb Delta-Type Doping in Si-MBE Superlattices
p.17

Molecular Beam Heteroepitaxy on Silicon Substrates
p.21

MBE Growth, Properties and Applications of Epitaxial Dielectric Fluoride Films on Semiconductors
p.29

Evaporation and Incorporation of Gallium Atoms and Ions during Si MBE with a Sublimating Source
p.37

Comparison of Growth Kinetics and Source Material Utilization Efficiency in MBE under Conventional and Ale Conditions
p.41

PED Mechanism Studied by Moleculardynamic Computer Simulation
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HomeMaterials Science ForumMaterials Science Forum Vol. 69Preparation and Characterizations of High Quality...

Preparation and Characterizations of High Quality InGaAs/GaAs Strained Multi-Quantum Wells Grown by MBE

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Molecular Beam Epitaxy

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Periodical:

Materials Science Forum (Volume 69)

Pages:

1-8

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.69.1

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Online since:

January 1991

Authors:

J.M. Zhou, Hao Qing Hou, Y. Huang

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© 1991 Trans Tech Publications Ltd. All Rights Reserved

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