Paper Titles

Sb Delta-Type Doping in Si-MBE Superlattices
p.17

Molecular Beam Heteroepitaxy on Silicon Substrates
p.21

MBE Growth, Properties and Applications of Epitaxial Dielectric Fluoride Films on Semiconductors
p.29

Evaporation and Incorporation of Gallium Atoms and Ions during Si MBE with a Sublimating Source
p.37

Comparison of Growth Kinetics and Source Material Utilization Efficiency in MBE under Conventional and Ale Conditions
p.41

PED Mechanism Studied by Moleculardynamic Computer Simulation
p.45

Growth of Aluminum and Copper on Silicon by Molecular Beam Epitaxy
p.49

MBE System for Research
p.53

Optical Simulation of the Effusion Molecular Beams in Epitaxy Technology
p.57

HomeMaterials Science ForumMaterials Science Forum Vol. 69Comparison of Growth Kinetics and Source Material...

Comparison of Growth Kinetics and Source Material Utilization Efficiency in MBE under Conventional and Ale Conditions

Article Preview

Abstract:

You might also be interested in these eBooks

Molecular Beam Epitaxy

Info:

Periodical:

Materials Science Forum (Volume 69)

Pages:

41-44

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.69.41

Citation:

Cite this paper

Online since:

January 1991

Authors:

J. Aarik, J. Lembra, H. Siimon

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1991 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: