Comparison of Growth Kinetics and Source Material Utilization Efficiency in MBE under Conventional and Ale Conditions
p.41
p.41
PED Mechanism Studied by Moleculardynamic Computer Simulation
p.45
p.45
Growth of Aluminum and Copper on Silicon by Molecular Beam Epitaxy
p.49
p.49
MBE System for Research
p.53
p.53
Optical Simulation of the Effusion Molecular Beams in Epitaxy Technology
p.57
p.57
The Liquid Metal Ion Source for Molecular Beam Epitaxy of Silicon
p.61
p.61
Prior to Growth Examinations of the Quality of GaAs Substrates
p.65
p.65
The Advantages of Selectively Delta-Doped III-V Heterostructures for HEMT Applications
p.67
p.67
III-V Heterostructure Lasers with Short Period Superlattice Recombination Region
p.75
p.75
Optical Simulation of the Effusion Molecular Beams in Epitaxy Technology
Abstract:
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Periodical:
Materials Science Forum (Volume 69)
Pages:
57-60
Citation:
Online since:
January 1991
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Сopyright:
© 1991 Trans Tech Publications Ltd. All Rights Reserved
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