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HomeMaterials Science ForumMaterials Science Forum Vol. 69The Advantages of Selectively Delta-Doped III-V...

The Advantages of Selectively Delta-Doped III-V Heterostructures for HEMT Applications

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Molecular Beam Epitaxy

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Periodical:

Materials Science Forum (Volume 69)

Pages:

67-74

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.69.67

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Online since:

January 1991

Authors:

P.S. Kop'ev, A.A. Budza, S.V. Ivanov, N.N. Ledentsov, B.Ya. Mel'tser, M.Yu. Nadtochy, V.M. Ustinov

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© 1991 Trans Tech Publications Ltd. All Rights Reserved

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