Electrophysical Parameters of the Metal-Semiconductor Interface in MBE and VPE Grown GaAs Schottky Contacts

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Edited by:

G. Minchev and L. Pramatarova

Pages:

99-100

DOI:

10.4028/www.scientific.net/MSF.69.99

Citation:

Z. E. Horváth et al., "Electrophysical Parameters of the Metal-Semiconductor Interface in MBE and VPE Grown GaAs Schottky Contacts", Materials Science Forum, Vol. 69, pp. 99-100, 1991

Online since:

January 1991

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