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An Extension of the Interfacial Layer Theory for Mixed Phase Metal-Semiconductor Contact
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Electrophysical Parameters of the Metal-Semiconductor Interface in MBE and VPE Grown GaAs Schottky Contacts
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The Dependence of Schottky Barrier Height of Metal-Semiconductor Contacts on the Ratio of Interfacial Area Occupied by Different Metal Components
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MBE Grown Planar Doped Barrier Diodes for Microwave Purposes
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Interface Symmetry and Heteroepitaxy
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HomeMaterials Science ForumMaterials Science Forum Vol. 69The Dependence of Schottky Barrier Height of...

The Dependence of Schottky Barrier Height of Metal-Semiconductor Contacts on the Ratio of Interfacial Area Occupied by Different Metal Components

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Molecular Beam Epitaxy

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Periodical:

Materials Science Forum (Volume 69)

Pages:

101-106

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.69.101

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Online since:

January 1991

Authors:

T.Q. Tuy, I. Mojzes, B. Szentpáli

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© 1991 Trans Tech Publications Ltd. All Rights Reserved

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