Electrophysical Parameters of the Metal-Semiconductor Interface in MBE and VPE Grown GaAs Schottky Contacts
p.99
p.99
The Dependence of Schottky Barrier Height of Metal-Semiconductor Contacts on the Ratio of Interfacial Area Occupied by Different Metal Components
p.101
p.101
MBE Grown Planar Doped Barrier Diodes for Microwave Purposes
p.107
p.107
Interface Symmetry and Heteroepitaxy
p.111
p.111
MBE Growth and Investigation of Heteroepitaxial CdTe, ZnTe Layers and CdTe-ZnTe Superlattices
p.115
p.115
Raman Scattering by Phonons in Short-Period GaAs/AlAs Superlattices
p.119
p.119
Temperature Dependence of Raman Scattering in Monocrystals and Epitaxial Thin Films of ZnSe
p.123
p.123
Low Temperature Photoluminescence of ZnSe Strained Thin Layers Grown on GaAs by MBE
p.127
p.127
Computer Simulation of Interdiffusion Processes on II-VI Superlattices
p.131
p.131
MBE Growth and Investigation of Heteroepitaxial CdTe, ZnTe Layers and CdTe-ZnTe Superlattices
Abstract:
You might also be interested in these eBooks
Info:
Periodical:
Materials Science Forum (Volume 69)
Pages:
115-118
Citation:
Online since:
January 1991
Authors:
Price:
Сopyright:
© 1991 Trans Tech Publications Ltd. All Rights Reserved
Share:
Citation: