Paper Titles

An Extension of the Interfacial Layer Theory for Mixed Phase Metal-Semiconductor Contact
p.85

Electrophysical Parameters of the Metal-Semiconductor Interface in MBE and VPE Grown GaAs Schottky Contacts
p.99

The Dependence of Schottky Barrier Height of Metal-Semiconductor Contacts on the Ratio of Interfacial Area Occupied by Different Metal Components
p.101

MBE Grown Planar Doped Barrier Diodes for Microwave Purposes
p.107

Interface Symmetry and Heteroepitaxy
p.111

MBE Growth and Investigation of Heteroepitaxial CdTe, ZnTe Layers and CdTe-ZnTe Superlattices
p.115

Raman Scattering by Phonons in Short-Period GaAs/AlAs Superlattices
p.119

Temperature Dependence of Raman Scattering in Monocrystals and Epitaxial Thin Films of ZnSe
p.123

Low Temperature Photoluminescence of ZnSe Strained Thin Layers Grown on GaAs by MBE
p.127

HomeMaterials Science ForumMaterials Science Forum Vol. 69Interface Symmetry and Heteroepitaxy

Interface Symmetry and Heteroepitaxy

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Molecular Beam Epitaxy

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Periodical:

Materials Science Forum (Volume 69)

Pages:

111-114

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.69.111

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Online since:

January 1991

Authors:

A.V. Andreeva

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© 1991 Trans Tech Publications Ltd. All Rights Reserved

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