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MBE Growth, Properties and Applications of Epitaxial Dielectric Fluoride Films on Semiconductors
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Evaporation and Incorporation of Gallium Atoms and Ions during Si MBE with a Sublimating Source
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Comparison of Growth Kinetics and Source Material Utilization Efficiency in MBE under Conventional and Ale Conditions
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PED Mechanism Studied by Moleculardynamic Computer Simulation
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MBE Growth, Properties and Applications of Epitaxial Dielectric Fluoride Films on Semiconductors

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Periodical:

Materials Science Forum (Volume 69)

Pages:

29-36

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.69.29

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Online since:

January 1991

Authors:

N.S. Sokolov

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© 1991 Trans Tech Publications Ltd. All Rights Reserved

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