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Preparation and Characterizations of High Quality InGaAs/GaAs Strained Multi-Quantum Wells Grown by MBE
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Influence of Growth Parameters on the Surface Morphology of MBE Grown GaAs and Al_xGa_1-xAs Layers
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Optical Switching of Double-Barrier Resonant Tunneling AlGaAs/GaAs Diode
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Sb Delta-Type Doping in Si-MBE Superlattices
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Molecular Beam Heteroepitaxy on Silicon Substrates
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MBE Growth, Properties and Applications of Epitaxial Dielectric Fluoride Films on Semiconductors
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Evaporation and Incorporation of Gallium Atoms and Ions during Si MBE with a Sublimating Source
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Comparison of Growth Kinetics and Source Material Utilization Efficiency in MBE under Conventional and Ale Conditions
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PED Mechanism Studied by Moleculardynamic Computer Simulation
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HomeMaterials Science ForumMaterials Science Forum Vol. 69Influence of Growth Parameters on the Surface...

Influence of Growth Parameters on the Surface Morphology of MBE Grown GaAs and Al_xGa_1-xAs Layers

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Molecular Beam Epitaxy

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Periodical:

Materials Science Forum (Volume 69)

Pages:

9-12

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.69.9

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Online since:

January 1991

Authors:

S.V. Ivanov, P.S. Kop'ev, N.N. Ledentsov

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© 1991 Trans Tech Publications Ltd. All Rights Reserved

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