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HomeMaterials Science ForumMaterials Science Forum Vol. 69

Materials Science Forum Vol. 69

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.69

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Table of Contents

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Paper Title Page

MBE System for Research

Authors: M. Laznicka

53

Optical Simulation of the Effusion Molecular Beams in Epitaxy Technology

Authors: B. Adamczyk, L. Michalak, E. Radzka

57

The Liquid Metal Ion Source for Molecular Beam Epitaxy of Silicon

Authors: V. Avrutin, A.F. Vyatkin

61

Prior to Growth Examinations of the Quality of GaAs Substrates

Authors: M. Cukr, J. Kub, J. Pastrňák, J. Oswald, V. Mísková

65

The Advantages of Selectively Delta-Doped III-V Heterostructures for HEMT Applications

Authors: P.S. Kop'ev, A.A. Budza, S.V. Ivanov, N.N. Ledentsov, B.Ya. Mel'tser, M.Yu. Nadtochy, V.M. Ustinov

67

III-V Heterostructure Lasers with Short Period Superlattice Recombination Region

Authors: A.M. Vasil'ev, A.A. Dzamashvili, S.V. Ivanov, P.S. Kop'ev, N.N. Ledentsov, B.Ya. Mel'tser, V.M. Ustinov

75

AlGaAs/GaAs Heterojunction Photodiodes Grown by MBE

Authors: Ferenc Riesz, B. Szentpáli, I. Mojzes, A. Salokatve, H. Asonen, M. Pessa

81

An Extension of the Interfacial Layer Theory for Mixed Phase Metal-Semiconductor Contact

Authors: T.Q. Tuy, I. Mojzes, B. Szentpáli, I. Cseh

85

Electrophysical Parameters of the Metal-Semiconductor Interface in MBE and VPE Grown GaAs Schottky Contacts

Authors: Zsolt E. Horváth, B. Kovács, M. Németh-Sallay, Béla Pécz

99

The Dependence of Schottky Barrier Height of Metal-Semiconductor Contacts on the Ratio of Interfacial Area Occupied by Different Metal Components

Authors: T.Q. Tuy, I. Mojzes, B. Szentpáli

101

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