Paper Titles

MBE Growth and Properties of Si/GeSi Superlattices on Si (111)
p.135

The Pair-Doped Delta-Superlattice: An Inner Probe to Measure Monolayer Doping Fluctuations in Semiconductors
p.139

Eu²⁺ and Sm²⁺ Ions as a Photoluminescent Probe in Epitaxial CaF₂ Films on Semiconductors
p.151

Low-Temperature Anomalies of 2D Electrons n-Al_xGa_1-xAs/GaAs Transfer Phenomena
p.155

In Situ REM Study of Silicon Surface during MBE Processes
p.159

Investigation of Sublimation Process of (111) and (100)CdTe Films by Rheed Intensity Oscillation
p.163

Composition of Oxides on (100) GaAs Produced by Oxygen Ion Bombardment
p.167

Characteristics and Application of Thin Epitaxial Dielectrics Formed by MBE
p.171

SEM Investigation of Defects on InP
p.175

HomeMaterials Science ForumMaterials Science Forum Vol. 69In Situ REM Study of Silicon Surface during MBE...

In Situ REM Study of Silicon Surface during MBE Processes

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Molecular Beam Epitaxy

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Periodical:

Materials Science Forum (Volume 69)

Pages:

159-162

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.69.159

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Online since:

January 1991

Authors:

Alexander V. Latyshev, A.B. Krasilnikov

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© 1991 Trans Tech Publications Ltd. All Rights Reserved

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