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Low-Temperature Anomalies of 2D Electrons n-Al_xGa_1-xAs/GaAs Transfer Phenomena
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In Situ REM Study of Silicon Surface during MBE Processes
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Investigation of Sublimation Process of (111) and (100)CdTe Films by Rheed Intensity Oscillation
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Composition of Oxides on (100) GaAs Produced by Oxygen Ion Bombardment
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Characteristics and Application of Thin Epitaxial Dielectrics Formed by MBE
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SEM Investigation of Defects on InP
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Characterization of MBE Grown Si Doped GaAs Layers on (100) GaAs and Si Substrates by Photoluminescence
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Ultrahigh Vacuum System
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GaAs and GaSb Treatment for MBE
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HomeMaterials Science ForumMaterials Science Forum Vol. 69SEM Investigation of Defects on InP

SEM Investigation of Defects on InP

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Molecular Beam Epitaxy

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Periodical:

Materials Science Forum (Volume 69)

Pages:

175-178

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.69.175

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Online since:

January 1991

Authors:

R. Fellenberg, W. Erfurth

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© 1991 Trans Tech Publications Ltd. All Rights Reserved

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