Characterization of MBE Grown Si Doped GaAs Layers on (100) GaAs and Si Substrates by Photoluminescence

Abstract:

Article Preview

Info:

Periodical:

Edited by:

G. Minchev and L. Pramatarova

Pages:

179-182

Citation:

J. Pastrňák et al., "Characterization of MBE Grown Si Doped GaAs Layers on (100) GaAs and Si Substrates by Photoluminescence", Materials Science Forum, Vol. 69, pp. 179-182, 1991

Online since:

January 1991

Export:

Price:

$38.00

Fetching data from Crossref.
This may take some time to load.