Characterization of MBE Grown Si Doped GaAs Layers on (100) GaAs and Si Substrates by Photoluminescence

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Edited by:

G. Minchev and L. Pramatarova

Pages:

179-182

DOI:

10.4028/www.scientific.net/MSF.69.179

Citation:

J. Pastrňák et al., "Characterization of MBE Grown Si Doped GaAs Layers on (100) GaAs and Si Substrates by Photoluminescence", Materials Science Forum, Vol. 69, pp. 179-182, 1991

Online since:

January 1991

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$35.00

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