Low-Temperature Anomalies of 2D Electrons n-AlxGa1-xAs/GaAs Transfer Phenomena
p.155
p.155
In Situ REM Study of Silicon Surface during MBE Processes
p.159
p.159
Investigation of Sublimation Process of (111) and (100)CdTe Films by Rheed Intensity Oscillation
p.163
p.163
Composition of Oxides on (100) GaAs Produced by Oxygen Ion Bombardment
p.167
p.167
Characteristics and Application of Thin Epitaxial Dielectrics Formed by MBE
p.171
p.171
SEM Investigation of Defects on InP
p.175
p.175
Characterization of MBE Grown Si Doped GaAs Layers on (100) GaAs and Si Substrates by Photoluminescence
p.179
p.179
Ultrahigh Vacuum System
p.183
p.183
GaAs and GaSb Treatment for MBE
p.189
p.189
Characterization of MBE Grown Si Doped GaAs Layers on (100) GaAs and Si Substrates by Photoluminescence
Abstract:
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Periodical:
Materials Science Forum (Volume 69)
Pages:
179-182
Citation:
Online since:
January 1991
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© 1991 Trans Tech Publications Ltd. All Rights Reserved
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