Paper Titles

Low-Temperature Anomalies of 2D Electrons n-Al_xGa_1-xAs/GaAs Transfer Phenomena
p.155

In Situ REM Study of Silicon Surface during MBE Processes
p.159

Investigation of Sublimation Process of (111) and (100)CdTe Films by Rheed Intensity Oscillation
p.163

Composition of Oxides on (100) GaAs Produced by Oxygen Ion Bombardment
p.167

Characteristics and Application of Thin Epitaxial Dielectrics Formed by MBE
p.171

SEM Investigation of Defects on InP
p.175

Characterization of MBE Grown Si Doped GaAs Layers on (100) GaAs and Si Substrates by Photoluminescence
p.179

Ultrahigh Vacuum System
p.183

GaAs and GaSb Treatment for MBE
p.189

HomeMaterials Science ForumMaterials Science Forum Vol. 69GaAs and GaSb Treatment for MBE

GaAs and GaSb Treatment for MBE

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Molecular Beam Epitaxy

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Periodical:

Materials Science Forum (Volume 69)

Pages:

189-0

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.69.189

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Online since:

January 1991

Authors:

Lilyana Pramatarova, G.M. Michev, H. Naradikjan, L.M. Trendafilov

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© 1991 Trans Tech Publications Ltd. All Rights Reserved

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