The Research on Ferromagnetism of the Y Doped ZnO Film

Abstract:

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We have calculated the energy band structure of spin-polarized electronic in Zn15Y1O16 and Zn14Y1O16 and the formation energy of Zn10Y4O16 in the ferromagnetical and antiferromagnetical state by the linear augmented plane wave based on the local density approximation. The results show that the Y doped ZnO film may be ferromagnetic and Zn vacancy (VZn) is the origin of ZnO thin film with Y doping.

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Periodical:

Edited by:

Ran Chen

Pages:

928-930

DOI:

10.4028/www.scientific.net/MSF.694.928

Citation:

Z. H. Lan and X. J. Miao, "The Research on Ferromagnetism of the Y Doped ZnO Film", Materials Science Forum, Vol. 694, pp. 928-930, 2011

Online since:

July 2011

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$35.00

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