Defects Study by Activation Energy Profile for Lowering Leakage Current in P-N Junction

Abstract:

Diode leakage current consists of diffusion (I_d) and generation current (I_g), which is strongly sensitive to the residual defect density. These defects can be studied by activation energy (E_a). Therefore, this paper presents a method for calculating activation energy of silicon p-n junctions from volume generation current. It combines temperature-dependent current–voltage (I –V) and capacitance–voltage (C-V) measurements of diodes. The I_g can be found from the volume leakage current by subtraction of the volume diffusion current, which is calculated while the depletion width is zero. The activation energy (E_a) is derived from slope of an Arrhenius plot of I_g. To derive the correct slope the temperature dependence of the depletion width, which is obtained from the corrected volume capacitance has been applied. The E_a profile below junction has been shown. The lower E_a value has been found near the junction, which may relate to the junction implantation.

• Periodical: Materials Science Forum (Volume 695)
• Pages: 569-572
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.695.569
• Online since: July 2011
• Authors: Itsara Srithanachai, Surada Ueamanapong, Poopol Rujanapich, Narin Atiwongsangthong, Surasak Niemcharoen, Amporn Poyai, Wisut Titiroongruang
• Keywords: Activation Energy, Defect, Junction, Leakage Current, Silicon

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