A Theoretical Estimation of the Charge Density Distribution in the Diluted Magnetic Semiconductors of Si1-xMx and Ge1-xMx (M = V, Mn, Co)

R.A.J.R. Sheeba; R. Saravanan; John Berchmans

doi:10.4028/www.scientific.net/MSF.699.167

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HomeMaterials Science ForumMaterials Science Forum Vol. 699A Theoretical Estimation of the Charge Density...

A Theoretical Estimation of the Charge Density Distribution in the Diluted Magnetic Semiconductors of Si_1-xM_x and Ge_1-xM_x(M = V, Mn, Co)

Abstract:

An effort has been made to understand the charge density distribution of the Si and Ge based diluted magnetic semiconductors. A theoretical analysis has been done on the variation of charge densities when the semiconductors Si and Ge are doped with the transition metal atoms of V, Mn and Co with different concentrations of x (0.02, 0.04, 0.06, 0.08, and 0.10), in Si_1-xM_x and Ge_1-xM_x. Two dimensional electron density contour maps have been plotted for all the compositions studied in this work. The theoretical mid bond densities were found out for the compounds which can be taken as the reference values for comparison of the experimental values of the same compositions.

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Materials Science Forum (Volume 699)

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167-183

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https://doi.org/10.4028/www.scientific.net/MSF.699.167

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September 2011

Authors:

R.A.J.R. Sheeba, R. Saravanan, John Berchmans

Keywords:

Charge Density, Diluted Magnetic Semiconductor (DMS), Ge, MEM, Si

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