Charge Carrier Localisation in Disordered Graphene Nanoribbons

Gerald Schubert; Holger Fehske

doi:10.4028/www.scientific.net/MSF.700.80

Paper Titles

Phase Development and Dielectric Properties of 0.98BaTiO₃-0.02Ba (Mg_1/3Nb_2/3) O₃ Ceramic
p.58

Thin-Film Deposition of Mixed-Conducting Ceramic Membranes
p.63

Observation of a Collapsing Layer Structure in Mg/Al Layered Double Hydroxides with Interlayer Hydrogen Phosphate by High Temperature In Situ X-Ray Diffraction with Synchrotoron Radiation
p.67

Thin Films of Cupric Oxide: Crystallite Size and Conduction Mechanism Analysis
p.71

Charge Carrier Localisation in Disordered Graphene Nanoribbons
p.80

Design Parameters for a Two-State Nanomemory Device
p.85

Effect of Valence-Band Mixing on Density Oscillations in 2D Hole Systems
p.89

Overlapping-Gate Architecture for Silicon Hall Bar MOSFET Devices in the Low Electron Density and High Magnetic Field Regime
p.93

Forced Nano-Oscillators Comprising Double-Walled Nanotubes
p.96

HomeMaterials Science ForumMaterials Science Forum Vol. 700Charge Carrier Localisation in Disordered Graphene...

Charge Carrier Localisation in Disordered Graphene Nanoribbons

Abstract:

We study the electronic properties of actual-size graphene nanoribbons subjected tosubstitutional disorder particularly with regard to the experimentally observed metal-insulatortransition. Calculating the local, mean and typical density of states, as well as the time-evolutionof the particle density we comment on a possible disorder-induced localisation of charge carriersat and close to the Dirac point within a percolation transition scenario.