Design Parameters for a Two-State Nanomemory Device

Richard K. F. Lee; James M. Hill

doi:10.4028/www.scientific.net/MSF.700.85

Paper Titles

Thin-Film Deposition of Mixed-Conducting Ceramic Membranes
p.63

Observation of a Collapsing Layer Structure in Mg/Al Layered Double Hydroxides with Interlayer Hydrogen Phosphate by High Temperature In Situ X-Ray Diffraction with Synchrotoron Radiation
p.67

Thin Films of Cupric Oxide: Crystallite Size and Conduction Mechanism Analysis
p.71

Charge Carrier Localisation in Disordered Graphene Nanoribbons
p.80

Design Parameters for a Two-State Nanomemory Device
p.85

Effect of Valence-Band Mixing on Density Oscillations in 2D Hole Systems
p.89

Overlapping-Gate Architecture for Silicon Hall Bar MOSFET Devices in the Low Electron Density and High Magnetic Field Regime
p.93

Forced Nano-Oscillators Comprising Double-Walled Nanotubes
p.96

Modelling the Diffusive Growth of Carbon Fullerenes
p.100

HomeMaterials Science ForumMaterials Science Forum Vol. 700Design Parameters for a Two-State Nanomemory...

Design Parameters for a Two-State Nanomemory Device

Abstract:

In this study, we investigate the internal mechanics for a two-state memory device,comprising a charged metallofullerene which is located inside a closed carbon nanotube.Assuming the Lennard-Jones interaction energy and the continuum approximation, the metallofullerenehas two symmetrically placed equal minimum energy positions. On one side theencapsulated metallofullerene represents the zero information state and by applying an externalelectrical field, the metallofullerene can be made to overcome the energy barrier of thenanotube, and pass from one end of the tube to the other, where the metallofullerene thenrepresents the one information state.