Modelling the Diffusive Growth of Carbon Fullerenes

Judith E. Bunder; James M. Hill

doi:10.4028/www.scientific.net/MSF.700.100

Paper Titles

Design Parameters for a Two-State Nanomemory Device
p.85

Effect of Valence-Band Mixing on Density Oscillations in 2D Hole Systems
p.89

Overlapping-Gate Architecture for Silicon Hall Bar MOSFET Devices in the Low Electron Density and High Magnetic Field Regime
p.93

Forced Nano-Oscillators Comprising Double-Walled Nanotubes
p.96

Modelling the Diffusive Growth of Carbon Fullerenes
p.100

Modelling the Adsorption of Methane Molecules into Carbon Nanotubes
p.104

Single-Domain Ferroelectric Water and its Concerted Diffusion in Nanotubes
p.108

Raman Characterisation of Carbon Nanotubes Grown by Plasma Enhanced Chemical Vapour Deposition
p.112

The Anomalous Photoluminescence and Thermally Stimulated Luminescence from Carbon Nanotubes
p.116

HomeMaterials Science ForumMaterials Science Forum Vol. 700Modelling the Diffusive Growth of Carbon...

Modelling the Diffusive Growth of Carbon Fullerenes

Abstract:

Recently, the present authors proposed a model describing fullerene growth in carbonvapor for which the di usion equation is assumed outside the fullerene and a family of possibleStefan conditions describe the growing fullerene surface. Here we consider a related model, butwith the additional assumption that the fullerene surface atomic density is constant throughoutthe growth process, which is justi ed by experimental data. We show that this constraint onthe fullerene lattice structure limits the solution to one possible Stefan condition. The proposedmodel may be extended to any nanostructure with constant atomic surface density.