Effect of Valence-Band Mixing on Density Oscillations in 2D Hole Systems

Thomas Kernreiter; Michele Governale; Ulrich Zülicke

doi:10.4028/www.scientific.net/MSF.700.89

Paper Titles

Observation of a Collapsing Layer Structure in Mg/Al Layered Double Hydroxides with Interlayer Hydrogen Phosphate by High Temperature In Situ X-Ray Diffraction with Synchrotoron Radiation
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Thin Films of Cupric Oxide: Crystallite Size and Conduction Mechanism Analysis
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Charge Carrier Localisation in Disordered Graphene Nanoribbons
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Design Parameters for a Two-State Nanomemory Device
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Effect of Valence-Band Mixing on Density Oscillations in 2D Hole Systems
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Overlapping-Gate Architecture for Silicon Hall Bar MOSFET Devices in the Low Electron Density and High Magnetic Field Regime
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Forced Nano-Oscillators Comprising Double-Walled Nanotubes
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Modelling the Diffusive Growth of Carbon Fullerenes
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Modelling the Adsorption of Methane Molecules into Carbon Nanotubes
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HomeMaterials Science ForumMaterials Science Forum Vol. 700Effect of Valence-Band Mixing on Density...

Effect of Valence-Band Mixing on Density Oscillations in 2D Hole Systems

Abstract:

We have calculated the spatial profile of density modulations generated in two-dimensional (2D) hole gases in response to an impurity potential. Both short-range and Coulombic point impurities are considered. The density response of hole systems turns out to be generally different from that seen in conduction-electron systems. Our results point to the importance of valence-band-mixing effects, especially in the regime of higher hole sheet densities.