Overlapping-Gate Architecture for Silicon Hall Bar MOSFET Devices in the Low Electron Density and High Magnetic Field Regime

Abstract:

Article Preview

A common issue in low temperature measurements of enhancement-mode metal-oxide-semiconductor (MOS) field-effect transistors (FETs) in the low electron density regime is the high contact resistance dominating the device impedance. In that case a voltage bias applied across the source and drain contact of a Hall bar MOSFET will mostly fall across the contacts (and not across the channel) and therefore magneto-transport measurements become challenging. However, from a physical point of view, the study of MOSFET nanostructures in the low electron density regime is very interesting (impurity limited mobility [1], carrier interactions [2,3] and spin-dependent transport [4]) and it is therefore important to come up with solutions [5,6] that work around the problem of a high contact resistance in such devices (c.f. Fig. 1 (a)).

Info:

Periodical:

Edited by:

B. J. Ruck and T. Kemmitt

Pages:

93-95

DOI:

10.4028/www.scientific.net/MSF.700.93

Citation:

L. H. W. Van Beveren et al., "Overlapping-Gate Architecture for Silicon Hall Bar MOSFET Devices in the Low Electron Density and High Magnetic Field Regime", Materials Science Forum, Vol. 700, pp. 93-95, 2012

Online since:

September 2011

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.