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HomeMaterials Science ForumMaterials Science Forum Vols. 715-716Origin of Goss Texture during Secondary...

Origin of Goss Texture during Secondary Recrystallisation in Silicon-Steel

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Abstract:

Primary recrystallised sheets of 3% silicon steel from two different industrial processing routes have been examined after laboratory annealing to initiate secondary recrystallisation. Metallography included etching to reveal individual dislocations and sub-boundaries as well as EBSD in scanning electron microscopy. Residual low angle boundaries are not normally observed inside the secondary grains. The growth of secondaries appears to occur in a jerky manner, associated with local intrusions into the primary matrix that destabilise the interface. The frequency of occurrence of special low energy grain boundaries such as 9 and 5 is believed to dictate the selectivity of the Goss orientation in both types of steel sheet.

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Recrystallization and Grain Growth IV

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Materials Science Forum (Volumes 715-716)

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73-80

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https://doi.org/10.4028/www.scientific.net/MSF.715-716.73

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Online since:

April 2012

Authors:

W. Bevis Hutchinson

Keywords:

Goss Texture, Grain Boundary, Secondary Recrystallization, Silicon Steel

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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