Effect of Sintering Temperature on the Microstructure and Electrical Properties of SnO2-Based Varistors

Guang Liang Hu; Jian Feng Zhu

doi:10.4028/www.scientific.net/MSF.724.323

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HomeMaterials Science ForumMaterials Science Forum Vol. 724Effect of Sintering Temperature on the...

Effect of Sintering Temperature on the Microstructure and Electrical Properties of SnO₂-Based Varistors

Abstract:

SnO₂-based varistors were successfully fabricated from the mixed powders, SnO₂, Co₂O₃, Nb₂O₅ and Cr₂O₃. The effects of sintering temperature (1250, 1300, 1350 and 1400 °C) on the microstructure and electrical properties were investigated. The results reveal that the grain size increases with increasing the sintering temperature, and the breakdown electrical filed decreases gradually. When the sintering temperature was 1300 °C, the nonlinear coefficient of the as fabricated SnO₂ based varistors presents the maximum of 27. Meanwhile, the leakage current possesses the minimum of 4.5 µA.

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Materials Science Forum (Volume 724)

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323-326

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https://doi.org/10.4028/www.scientific.net/MSF.724.323

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June 2012

Authors:

Guang Liang Hu, Jian Feng Zhu

Keywords:

Electrical Properties, Microstructure, SnO₂, Varistors

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References

[1] S.A. Pianaro, P.R. Bueno, E. Longo and J.A. Varela: J. Mater. Sci. Lett. Vol. 14 (1995), p.692.

Google Scholar

[2] M.S. Castro and C.M. Aldao: J. Eur. Ceram. Soc. Vol. 18 (1998), p.2233.

Google Scholar

[3] M.R.C. Stantos, V.C. Sousa, M.M. Oliveira, F.R. Sensato, W.K. Bacelar and J.W. Gomes: Mater. Chem. Phys. Vol. 90 (2005), p.1.

Google Scholar

[4] A.B. Glot and A.V. Gaponov: Physica B. Vol. 405 (2010), p.705.

Google Scholar

[5] P.R. Bueno, J.A. Varela and E. Longo: J. Eur. Ceram. Soc. Vol. 28 (2008), p.505.

Google Scholar

[6] M.M. Oliveira, P.R. Bueno, M.R.C. Santos and J.A. Varela: J. Eur. Ceram. Soc. Vol. 21 (2001), p.1179.

Google Scholar

[7] P.A. Stantos and S. Maruchin: Mater. Lett. Vol. 60 (2006), p.1554.

Google Scholar

[8] M.R.C. Stantos, P.R. Bueno, E. Longo and J.A. Varela: J. Eur. Ceram. Soc. Vol. 21 (2001), p.161.

Google Scholar

[9] M.A. Rairez and J.F. Fernandez: J. Mater. Sci: Mater. Electron. Vol. 20 (2009), p.49.

Google Scholar

[10] S.A. Pianaro, P.R. Bueno, E. Longo and J.A. Varela: Ceram. Inter. Vol. 25 (1999), p.1.

Google Scholar

[11] E.R. Leite, A.M. Nascimento and P.R. Bueno: J. Mater. Sci.: Mater, Electr. Vol. 10 (1999), p.321.

Google Scholar

[12] J.S. Vasconcelos, N.S.L.S. Vasconcelos, M.O. Orlandi and P.R. Bueno: Appl. Phys. Lett. Vol. 89 (2006), p.152102.

Google Scholar