Surface Preparation of 4° Off-Axis 4H-SiC Substrate for Epitaxial Growth

Xun Li; Jawad Hassan; Olof Kordina; Erik Janzén; Anne Henry

doi:10.4028/www.scientific.net/MSF.740-742.225

Paper Titles

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Simulation of Gas-Phase Chemistry for Selected Carbon Precursors in Epitaxial Growth of SiC
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The Nucleation and Propagation of Threading Dislocations with C-Component of Burgers Vector in PVT-Grown 4H-SiC
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Uniformity and Morphology of 10 x 100mm 4° Off-Axis 4H-SiC Epitaxial Layers and their Effect on Device Performance
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Study of the Effects of Growth Rate, Miscut Direction and Postgrowth Argon Annealing on the Surface Morphology of Homoepitaxially Grown 4H Silicon Carbide Films
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Defect Revelation and Evaluation of 4H Silicon Carbide by Optimized Molten KOH Etching Method
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HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Surface Preparation of 4° Off-Axis 4H-SiC...

Surface Preparation of 4° Off-Axis 4H-SiC Substrate for Epitaxial Growth

Abstract:

Results of surface preparation on Si-face 4° off-cut 4H-SiC substrates are presented in this paper. The influences of two types of etchants, i.e. hydrogen chloride (HCl) and only hydrogen (H2), were investigated by Nomarski microscopy and AFM. The experiments were performed in a hot wall CVD reactor using a TaC coated susceptor. Four etching temperatures, including 1580 °C, 1600 °C, 1620 °C and 1640 °C, were studied. In-situ etching with only H2 as ambient atmosphere is found to be the optimal way for the SiC surface preparation. Using HCl at temperature higher than 1620 °C could degrade the substrates surface quality.

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Materials Science Forum (Volumes 740-742)

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225-228

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https://doi.org/10.4028/www.scientific.net/MSF.740-742.225

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Online since:

January 2013

Authors:

Xun Li, Jawad Hassan, Olof Kordina, Erik Janzén, Anne Henry

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4H-SiC Substrates, CVD, Surface Preparation

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