Amorphous Silicon Carbide Film Formation at Room Temperature by Monomethylsilane Gas

Hitoshi Habuka; Masaki Tsuji; Yusuke Ando

doi:10.4028/www.scientific.net/MSF.740-742.235

Paper Titles

The Nucleation and Propagation of Threading Dislocations with C-Component of Burgers Vector in PVT-Grown 4H-SiC
p.217

Uniformity and Morphology of 10 x 100mm 4° Off-Axis 4H-SiC Epitaxial Layers and their Effect on Device Performance
p.221

Surface Preparation of 4° Off-Axis 4H-SiC Substrate for Epitaxial Growth
p.225

Study of the Effects of Growth Rate, Miscut Direction and Postgrowth Argon Annealing on the Surface Morphology of Homoepitaxially Grown 4H Silicon Carbide Films
p.229

Amorphous Silicon Carbide Film Formation at Room Temperature by Monomethylsilane Gas
p.235

10 × 100 mm 4H-SiC Epitaxial Growth by Warm-Wall Planetary Reactor
p.239

Defect Revelation and Evaluation of 4H Silicon Carbide by Optimized Molten KOH Etching Method
p.243

Low Temperature Homoepitaxial Growth of 4H-SiC on 4° Off-Axis Carbon-Face Substrate Using BTMSM Source
p.247

Morphology Optimization of Very Thick 4H-SiC Epitaxial Layers
p.251

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Amorphous Silicon Carbide Film Formation at Room Temperature by Monomethylsilane Gas

Abstract:

The silicon carbide thin film formation process, completely performed at room temperature, was developed by argon plasma and a chemical vapor deposition using monomethylsilane gas. Silicon-carbon bonds were found to exist in the obtained film, the surface of which could remain specular after exposure to hydrogen chloride gas at 800 oC. The silicon dangling bonds formed at the silicon surface by the argon plasma are considered to react with the monomethylsilane molecules at room temperature to produce the amorphous silicon carbide film.