Low Temperature Homoepitaxial Growth of 4H-SiC on 4° Off-Axis Carbon-Face Substrate Using BTMSM Source

Hun Hee Lee; Han Suk Seo; Do Hyun Lee; Chang Hyun Kim; Hyun Woo Kim; Hyeong Joon Kim

doi:10.4028/www.scientific.net/MSF.740-742.247

Paper Titles

Study of the Effects of Growth Rate, Miscut Direction and Postgrowth Argon Annealing on the Surface Morphology of Homoepitaxially Grown 4H Silicon Carbide Films
p.229

Amorphous Silicon Carbide Film Formation at Room Temperature by Monomethylsilane Gas
p.235

10 × 100 mm 4H-SiC Epitaxial Growth by Warm-Wall Planetary Reactor
p.239

Defect Revelation and Evaluation of 4H Silicon Carbide by Optimized Molten KOH Etching Method
p.243

Low Temperature Homoepitaxial Growth of 4H-SiC on 4° Off-Axis Carbon-Face Substrate Using BTMSM Source
p.247

Morphology Optimization of Very Thick 4H-SiC Epitaxial Layers
p.251

3C-SiC Heteroepitaxy on Hexagonal SiC Substrates
p.257

3C-SiC Growth on (001) Si Substrates by Using a Multilayer Buffer
p.263

Heteroepitaxial Growth of 3C-SiC on Polar Faces of 6H-SiC Substrates, TEM Investigations
p.267

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Low Temperature Homoepitaxial Growth of 4H-SiC on 4° Off-Axis Carbon-Face Substrate Using BTMSM Source

Abstract:

Homoepitaxial 4H-SiC thin films were grown on (0 0 0 -1) C-face substrate by cold-wall chemical vapor deposition (CVD) using bis-trimethylsilylmethane (BTMSM, C7H20Si2) precursor. Because of the polarity difference of C-face and (0 0 0 1) Si-face, epitaxial growth conditions of C-face was quite different from those of Si-face. To improve the quality of C-face epitaxial films, effects of epitaxial growth conditions on surface morphology and crystallinity of epitaxial films were investigated.