Morphology Optimization of Very Thick 4H-SiC Epitaxial Layers

Abstract:

Epitaxial growth of about 200 µm thick, low doped 4H-SiC layers grown on n-type 8° off-axis Si-face substrates at growth rates around 100 µm/h has been done in order to realize thick epitaxial layers with excellent morphology suitable for high power devices. The study was done in a hot wall chemical vapor deposition reactor without rotation. The growth of such thick layers required favorable pre-growth conditions and in-situ etch. The growth of 190 µm thick, low doped epitaxial layers with excellent morphology was possible when the C/Si ratio was below 0.9. A low C/Si ratio and a favorable in-situ etch are shown to be the key parameters to achieve 190 µm thick epitaxial layers with excellent morphology.

• Periodical: Materials Science Forum (Volumes 740-742)
• Pages: 251-254
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.740-742.251
• Online since: January 2013
• Authors: Milan Yazdanfar, Pontus Stenberg, Ian D. Booker, Ivan.G Ivanov, Henrik Pedersen, Olof Kordina, Erik Janzén
• Keywords: Chloride-Based, CVD, Morpholoy, Thick Epitaxial Layer

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