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HomeMaterials Science ForumMaterials Science Forum Vols. 740-7423C-SiC Heteroepitaxy on Hexagonal SiC Substrates

3C-SiC Heteroepitaxy on Hexagonal SiC Substrates

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Abstract:

The growth of 3C-SiC on hexagonal polytype is addressed and a brief review is given for various growth techniques. The Chemical Vapor Deposition is shown as a suitable technique to grow single domain 3C epilayers on 4H-SiC substrate and a 12.5 µm thick layer is demonstrated; even thicker layers have been obtained. Various characterization techniques including optical microscopy, X-ray techniques and photoluminescence are compared for the evaluation of the crystal quality and purity of the layers.

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Silicon Carbide and Related Materials 2012

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

257-262

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.257

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Online since:

January 2013

Authors:

Anne Henry, Xun Li, Henrik Jacobson, Sven Andersson, Alexandre Boulle, Didier Chaussende, Erik Janzén

Keywords:

3C-SiC(111), CVD, Heteroepitaxy, Photoluminescence (PL), X-Ray Diffraction (XRD)

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© 2013 Trans Tech Publications Ltd. All Rights Reserved

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