Towards Bulk-Like 3C-SiC Growth Using Low Off-Axis Substrates

Abstract:

Bulk-like 3C-SiC was grown on 1.2 degrees low off-axis 6H-SiC substrates using a sublimation epitaxy technique. The effects of temperature ramp-up and increase in layer thickness on the 3C-SiC domain formation were explored. The temperature ramp-up had no significant effect on the domain size. The domain size was considerably increased and the crystal quality was significantly improved by increasing the thickness of the layer towards bulk-like material. Average full width at half maximum values of 149 arcsec and 65 arcsec were measured in samples with thicknesses of 305 µm and 1080 µm, respectively, at a footprint of 1x3 mm2. This result implies that heteropeitaxial growth of 3C-SiC on low off-axis 6H-SiC substrates by a sublimation method can be used to prepare 3C-SiC seeds or can be further developed for growth of bulk 3C-SiC material.

• Periodical: Materials Science Forum (Volumes 740-742)
• Pages: 275-278
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.740-742.275
• Online since: January 2013
• Authors: Valdas Jokubavicius, Ho Hsuan Huang, Saskia Schimmel, Rickard Liljedahl, Rositza Yakimova, Mikael Syväjärvi
• Keywords: Bulk 3C-SiC, Low Off-Axis Substrates, Sublimation Epitaxy

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