Defect Generation and Annihilation in 3C-SiC-(001) Homoepitaxial Growth by Sublimation

Philip Hens; Julian Müller; Günter Wagner; Rickard Liljedahl; Erdmann Spiecker; Mikael Syväjärvi

doi:10.4028/www.scientific.net/MSF.740-742.283

Paper Titles

Heteroepitaxial Growth of 3C-SiC on Polar Faces of 6H-SiC Substrates, TEM Investigations
p.267

Innovative 3C-SiC on SiC via Direct Wafer Bonding
p.271

Towards Bulk-Like 3C-SiC Growth Using Low Off-Axis Substrates
p.275

Color Chart for Thin SiC Films Grown on Si Substrates
p.279

Defect Generation and Annihilation in 3C-SiC-(001) Homoepitaxial Growth by Sublimation
p.283

Plasma Treatment of 3C-SiC Surfaces
p.287

Structural Characterization of 3C-SiC Grown Using Methyltrichlorosilane
p.291

Monte Carlo Study of the Hetero-Polytypical Growth of Cubic on Hexagonal Silicon Carbide Polytypes
p.295

Post-Growth Process Effect on Hetero-Epitaxial 3C-SiC Wafer Bow and Residual Stress
p.301

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Defect Generation and Annihilation in 3C-SiC-(001)...

Defect Generation and Annihilation in 3C-SiC-(001) Homoepitaxial Growth by Sublimation

Abstract:

In this paper we present a concept on the defect generation and annihilation during the homoepitaxial growth step of cubic silicon carbide by sublimation epitaxy on templates grown by chemical vapor deposition on silicon substrates. Several structural defects like stacking faults, twins and star defects show opposite evolution from the template layer into the sublimation grown material. While single planar defects tend to annihilate with increasing layer thickness, the defect clusters assigned to the star defects are enlarging. These issues contribute to a balance of how to achieve the best possible quality on thick layers.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2012

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

283-286

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.283

Citation:

Cite this paper

Online since:

January 2013

Authors:

Philip Hens, Julian Müller, Günter Wagner, Rickard Liljedahl, Erdmann Spiecker, Mikael Syväjärvi

Keywords:

3C-SiC, AFM, Defect, Homoepitaxy, Sublimation, TEM, X-Ray Diffraction (XRD)

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] D. Chaussende, J. Eid, F. Mercier, R. Madar, M. Pons: Mat. Sci. Forum, 615-617 (2009) pp.31-36.

DOI: 10.4028/www.scientific.net/msf.615-617.31

Google Scholar

[2] M. Zielinski, M. Portrail, T. Chassagne, S. Juillaguet, H. Peyre: J. Cryst. Growth, 310 (2008) pp.3174-3182.

Google Scholar

[3] M. Syväjärvi, R. Yakimova in: P. Bhattachrya, R. Fornari, H. Kamimura (Eds. ), Comprehensive Semiconductor Science & Technology (SEST), Elsevier, (1999).

Google Scholar

[4] P. Hens, V. Jokubavicius, R. Liljedahl, G. Wagner, R. Yakimova, P. Wellmann, M. Syväjärvi, Materials Letters Vol. 67, No. 1 (2012), pp.300-302.

DOI: 10.1016/j.matlet.2011.09.109

Google Scholar

[5] A. Severino, R. Anzalone, M. Camarda, N. Piluso, F. LaVia: Mat. Sci. Forum, 711 (2012) pp.27-30.

Google Scholar