Monte Carlo Study of the Hetero-Polytypical Growth of Cubic on Hexagonal Silicon Carbide Polytypes

Abstract:

We use three dimensional kinetic Monte Carlo simulations on super-lattices to study the hetero-polytypical growth of cubic silicon carbide polytype (3C-SiC) on misoriented hexagonal (4H and 6H) substrates finding that the growth on misoriented (4°-10° degree off) 6H substrates, with step bunched surfaces, can strongly improve the quality of the cubic epitaxial film promoting 3C single domain growths

• Periodical: Materials Science Forum (Volumes 740-742)
• Pages: 295-300
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.740-742.295
• Online since: January 2013
• Authors: Massimo Camarda, Antonino La Magna, Francesco La Via
• Keywords: Heteroepitaxial Growth, Monte-Carlo Simulation, Polytype, Surface Morphology

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