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HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Bulk 3C-SiC Crystal by Top Seeded Solution Growth...

Bulk 3C-SiC Crystal by Top Seeded Solution Growth Method

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Abstract:

In this paper, we review our researches on the high-quality 3C-SiC bulk crystal growth. The polytype control and the suppression of defects are essential in the growth 3C-SiC on hexagonal SiC seed crystals. The growth polytype of SiC is usually controlled by the inheritance of the seed crystal. In contrast, we established kinetic polytype control in which the preferential growth of 3C-SiC can be achieved by the difference in the growth rates depending on supersaturation for the polytypes. In the growth of 3C-SiC, double positioning boundaries (DPBs) are often formed by the existence of twinned domain. The elimination of DPBs can be achieved utilizing the anisotropy of the step advance velocity.

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Silicon Carbide and Related Materials 2012

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

311-314

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.311

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Online since:

January 2013

Authors:

Kazuaki Seki, Shunta Harada, Toru Ujihara

Keywords:

3C-SiC, Bulk Crystal, Double Positioning Boundary, Polytype Control, Solution Growth

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© 2013 Trans Tech Publications Ltd. All Rights Reserved

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