Structural Investigation of Heteroepitaxial 3C-SiC Grown on 4H-SiC Substrates

Henrik Jacobson; Xun Li; Erik Janzén; Anne Henry

doi:10.4028/www.scientific.net/MSF.740-742.319

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Post-Growth Process Effect on Hetero-Epitaxial 3C-SiC Wafer Bow and Residual Stress
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Elaboration of Core Si/Shell SiC Nanowires
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Bulk 3C-SiC Crystal by Top Seeded Solution Growth Method
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Microsecond Carrier Lifetimes in Bulk-Like 3C-SiC Grown by Sublimation Epitaxy
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Structural Investigation of Heteroepitaxial 3C-SiC Grown on 4H-SiC Substrates
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Exploring SiC Growth Limitation of Vapor-Liquid-Solid Mechanism when Using Two Different Carbon Precursors
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High-Rate Rotated Epitaxy of 3C-SiC(111) on Si(110) Substrate for Qualified Epitaxial Graphene on Silicon
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p-Doped SiC Growth on Diamond Substrate by VLS Transport
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Polytype Inclusions in Cubic Silicon Carbide
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HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Structural Investigation of Heteroepitaxial 3C-SiC...

Structural Investigation of Heteroepitaxial 3C-SiC Grown on 4H-SiC Substrates

Abstract:

3C-SiC epilayers grown on Si-face nominally on-axis 4H-SiC substrate are characterized with X-ray diffraction techniques. The aim was to investigate if these 3C-SiC epilayers were grown by single domain growth. The results show that all samples start by having several nucleation centers all over the substrate surface and the growth continues with two domain formations. As the growth proceeds one domain overtakes the growth and single domain crystal growth occurs. This single domain was further investigated and the results show that it seems to contain many sub-domains with same lattice constant but slightly tilted.

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Silicon Carbide and Related Materials 2012

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Periodical:

Materials Science Forum (Volumes 740-742)

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319-322

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.319

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Online since:

January 2013

Authors:

Henrik Jacobson, Xun Li, Erik Janzén, Anne Henry

Keywords:

3C-SiC, Heteroepitaxy, X-Ray Diffraction (XRD)

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References

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