p-Doped SiC Growth on Diamond Substrate by VLS Transport

Arthur Vo-Ha; Davy Carole; Mihai Lazar; Dominique Tournier; François Cauwet; Véronique Soulière; Dominique Planson; Christian Brylinski; Gabriel Ferro

doi:10.4028/www.scientific.net/MSF.740-742.331

Paper Titles

Microsecond Carrier Lifetimes in Bulk-Like 3C-SiC Grown by Sublimation Epitaxy
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Structural Investigation of Heteroepitaxial 3C-SiC Grown on 4H-SiC Substrates
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Exploring SiC Growth Limitation of Vapor-Liquid-Solid Mechanism when Using Two Different Carbon Precursors
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High-Rate Rotated Epitaxy of 3C-SiC(111) on Si(110) Substrate for Qualified Epitaxial Graphene on Silicon
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p-Doped SiC Growth on Diamond Substrate by VLS Transport
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Polytype Inclusions in Cubic Silicon Carbide
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Rotated Epitaxy of 3C-SiC(111) on Si(110) Substrate Using Monomethylsilane-Based Gas-Source Molecular-Beam Epitaxy
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Photoluminescence of 8H-SiC
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P-6H-SiC Conductivity Compensation after Irradiation of 8MeV Protons
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HomeMaterials Science ForumMaterials Science Forum Vols. 740-742p-Doped SiC Growth on Diamond Substrate by VLS...

p-Doped SiC Growth on Diamond Substrate by VLS Transport

Abstract:

This work deals with the study of the Selective Epitaxial Growth (SEG) of SiC using the Vapour-Liquid-Solid (VLS) transport on diamond (100) substrate with Al-Si as the liquid phase fed by propane. Morphology, structure and doping type of the SiC deposit were determined. Polycrystalline p-doped 3C-SiC was obtained during the growth. Study of the initial step of growth showed that SiC nucleation occurs without any propane addition but just through the interaction of liquid Al-Si and diamond via a dissolution/precipitation process. This explains the random nucleation and the polycrystalline growth. Despite this, preliminary electrical measurements show encouraging results.

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Silicon Carbide and Related Materials 2012

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

331-334

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.331

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Online since:

January 2013

Authors:

Arthur Vo-Ha, Davy Carole, Mihai Lazar, Dominique Tournier, François Cauwet, Véronique Soulière, Dominique Planson, Christian Brylinski, Gabriel Ferro

Keywords:

Diamond, p-Type Doping, Selective Epitaxy, Silicon Carbide (SiC), VLS Growth

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