Polytype Inclusions in Cubic Silicon Carbide

Abstract:

The 3C-SiC layers on nominally on-axis 6H-SiC substrates were grown using sublimation epitaxy. More than 90% coverage by 3C-SiC is typically achieved at growth temperature of 1775°C. The main reason for the polytype inclusions to appear is local supersaturation non-uniformities over the sample surface which appear due to the temperature gradient and spiral growth nature of 6H-SiC. On the 6H-SiC spirals with small steps supersaturation is smaller and 3C-SiC nucleation and growth is diminished. Due to surface free energy and surface diffusion differences, polytype inclusions appear differently when 3C-SiC is grown on the Si- and C-faces. The 6H-SiC inclusions as well as twin boundaries act as neutral scattering centers and lower charge carrier mobility.

• Periodical: Materials Science Forum (Volumes 740-742)
• Pages: 335-338
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.740-742.335
• Online since: January 2013
• Authors: Remigijus Vasiliauskas, Paulius Malinovskis, Algirdas Mekys, Mikael Syväjärvi, Jurgis Storasta, Rositza Yakimova
• Keywords: 3C-SiC, Charge Carrier Mobility, Polytype Inclusions, Supersaturation

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