Raman Investigation of Aluminum-Doped 4H-SiC

Sandrine Juillaguet; Pawel Kwasnicki; Hervé Peyre; Leszek Konczewicz; Sylvie  Contreras; Marcin Zielinski; Jean  Camassel

doi:10.4028/www.scientific.net/MSF.740-742.357

Paper Titles

Polytype Inclusions in Cubic Silicon Carbide
p.335

Rotated Epitaxy of 3C-SiC(111) on Si(110) Substrate Using Monomethylsilane-Based Gas-Source Molecular-Beam Epitaxy
p.339

Photoluminescence of 8H-SiC
p.347

P-6H-SiC Conductivity Compensation after Irradiation of 8MeV Protons
p.353

Raman Investigation of Aluminum-Doped 4H-SiC
p.357

An EPR Study of Defects in Neutron-Irradiated Cubic SiC Crystals
p.361

An Extended EDMR Setup for SiC Defect Characterization
p.365

Comparative Analysis of Defect Formation in Silicon Carbide under Electron and Proton Irradiation
p.369

Deep Levels in P-Type 4H-SiC Induced by Low-Energy Electron Irradiation
p.373

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Raman Investigation of Aluminum-Doped 4H-SiC

Raman Investigation of Aluminum-Doped 4H-SiC

Abstract:

Raman scattering spectra have been collected on p-type 4H-SiC samples doped with aluminum up to 5×10¹⁹ atoms per cubic cm. The distortion and asymmetry of FTA modes which appear in the low frequency range has been probed in great details. We show that, using standard Fano formulae with three parameters per mode, one can successively fit all FTA modes profiles in the concentration range 2×10¹⁶ – 5×10¹⁹ Al.cm^-3.