An Extended EDMR Setup for SiC Defect Characterization

Gernot Gruber; Markus Koch; Gregor Pobegen; Michael Nelhiebel; Peter Hadley

doi:10.4028/www.scientific.net/MSF.740-742.365

Paper Titles

Photoluminescence of 8H-SiC
p.347

P-6H-SiC Conductivity Compensation after Irradiation of 8MeV Protons
p.353

Raman Investigation of Aluminum-Doped 4H-SiC
p.357

An EPR Study of Defects in Neutron-Irradiated Cubic SiC Crystals
p.361

An Extended EDMR Setup for SiC Defect Characterization
p.365

Comparative Analysis of Defect Formation in Silicon Carbide under Electron and Proton Irradiation
p.369

Deep Levels in P-Type 4H-SiC Induced by Low-Energy Electron Irradiation
p.373

Determination of the Electrical Capture Process of the EH₆-Center in n-Type 4H-SiC
p.377

Diffusion Study of Chlorine in SiC by First Principles Calculations
p.381

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742An Extended EDMR Setup for SiC Defect...

An Extended EDMR Setup for SiC Defect Characterization

Abstract:

Only a few methods exist to observe, identify, and localize defects in SiC devices. These defects are a major limit for device performance and reliability. Presented is an improved experimental setup to investigate deep level defects using electrically detected magnetic resonance (EDMR). The method applied in this study exploits the simultaneous in-situ electron spin resonance (ESR) measurement of a standard sample (DPPH) to calibrate the magnetic field. The functionality is shown by comparing the data of an ion implanted SiC diode to results from a recent study . The in-situ B-field calibration is found to increase the accuracy of EDMR measurements by a factor of 2.5.