An Extended EDMR Setup for SiC Defect Characterization
Only a few methods exist to observe, identify, and localize defects in SiC devices. These defects are a major limit for device performance and reliability. Presented is an improved experimental setup to investigate deep level defects using electrically detected magnetic resonance (EDMR). The method applied in this study exploits the simultaneous in-situ electron spin resonance (ESR) measurement of a standard sample (DPPH) to calibrate the magnetic field. The functionality is shown by comparing the data of an ion implanted SiC diode to results from a recent study . The in-situ B-field calibration is found to increase the accuracy of EDMR measurements by a factor of 2.5.
Alexander A. Lebedev, Sergey Yu. Davydov, Pavel A. Ivanov and Mikhail E. Levinshtein
G. Gruber et al., "An Extended EDMR Setup for SiC Defect Characterization", Materials Science Forum, Vols. 740-742, pp. 365-368, 2013