Microsecond Carrier Lifetimes in Bulk-Like 3C-SiC Grown by Sublimation Epitaxy

Jian Wu Sun; Satoshi Kamiyama; Peter J. Wellmann; Rickard Liljedahl; R. Yakimova; Mikael Syväjärvi

doi:10.4028/www.scientific.net/MSF.740-742.315

Paper Titles

Monte Carlo Study of the Hetero-Polytypical Growth of Cubic on Hexagonal Silicon Carbide Polytypes
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Post-Growth Process Effect on Hetero-Epitaxial 3C-SiC Wafer Bow and Residual Stress
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Elaboration of Core Si/Shell SiC Nanowires
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Bulk 3C-SiC Crystal by Top Seeded Solution Growth Method
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Microsecond Carrier Lifetimes in Bulk-Like 3C-SiC Grown by Sublimation Epitaxy
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Structural Investigation of Heteroepitaxial 3C-SiC Grown on 4H-SiC Substrates
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Exploring SiC Growth Limitation of Vapor-Liquid-Solid Mechanism when Using Two Different Carbon Precursors
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High-Rate Rotated Epitaxy of 3C-SiC(111) on Si(110) Substrate for Qualified Epitaxial Graphene on Silicon
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p-Doped SiC Growth on Diamond Substrate by VLS Transport
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HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Microsecond Carrier Lifetimes in Bulk-Like 3C-SiC...

Microsecond Carrier Lifetimes in Bulk-Like 3C-SiC Grown by Sublimation Epitaxy

Abstract:

High quality bulk-like 3C-SiC were grown on on-axis (0001) 6H-SiC substrate by sublimation epitaxy. The microwave photoconductivity decay mapping measurements revealed that this material shows considerable long carrier lifetimes varied from 3.519 to 7.834 μs under the injection level of 3.5×1012 cm-2, which are comparable with the best carrier lifetimes in 4H-SiC layers. The mapping of high resolution x-ray diffraction obtained from the same region shows that smaller carrier lifetimes seem to correspond to the larger FWHM values and vice versa. This shows that long carrier lifetime obtained in 3C-SiC is due to the improvement of the crystal quality.

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Silicon Carbide and Related Materials 2012

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Materials Science Forum (Volumes 740-742)

Pages:

315-318

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.315

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Online since:

January 2013

Authors:

Jian Wu Sun, Satoshi Kamiyama, Peter J. Wellmann, Rickard Liljedahl, R. Yakimova, Mikael Syväjärvi

Keywords:

3C-SiC, Carrier Lifetime, High Resolution X-Ray Diffraction (HR-XRD)

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References

[1] A. Schöner, M. Krieger, G. Pensl, M. Abe, and H. Nagasawa, Chem. Vap. Deposition 12 (2006) 523.

DOI: 10.1002/cvde.200606467

Google Scholar

[2] E. Polychroniadis, M. Syväjärvi, R. Yakimova, J. Stoemenos, Journal of Crystal Growth, 263 (2004) 68.

DOI: 10.1016/j.jcrysgro.2003.10.092

Google Scholar

[3] M. Syväjärvi and R. Yakimova: Sublimation epitaxial growth of hexagonal and cubic SiC, Elsevier, chapter in encyclopedia - the Comprehensive Semiconductor Science & Technology (SEST), Pallab Bhattacharya, Roberto Fornari and Hiroshi Kamimura (Eds), ISBN 978-0-444-53144-5 (2011).

DOI: 10.1016/b978-0-44-453153-7.00092-4

Google Scholar

[4] S. G. Sridhara, T. J. Eperjesi, R. P Devaty, W. J. Choyke, Materials Science and Engineering B, 61–62 (1999) 229.

Google Scholar

[5] J. W. Sun, I. G. Ivanov, R. Liljedahl, R. Yakimova, and M. Syväjärvi, Appl. Phys. Lett. 100 (2012) 252101.

DOI: 10.1063/1.4729583

Google Scholar

[6] R. Yakimova, G.R. Yazdi, N. Sritirawisarn, and M. Syväjärvi, Mater. Sci Forum 527-528 (2006) 283.

Google Scholar

[7] T. Kimoto, K. Danno, J. Suda, physica status solidi (b), 245 (2008) 1327.

Google Scholar

[8] V. Grivickas, G. Manolis, K. Gulbinas, K. Jarašiunas, and M. Kato, Appl. Phys. Lett. 95 (2009) 242110.

DOI: 10.1063/1.3273382

Google Scholar