Elaboration of Core Si/Shell SiC Nanowires

Abstract:

Silicon nanowires obtained by a top-down approach have been carburized at high temperature and atmospheric pressure with two different gaseous precursors: CH4 and C3H8. These processes reveal core silicon / shell 3C-SiC nanowires. After being characterized by SEM, FIB-SEM and TEM microscopies, the 3C-SiC layer has been used as seed layer for the growth of epitaxial 3C-SiC on the nanowires. Preferential growth of 3C-SiC on the sidewalls of nanowires has been observed. Thanks to the biocompatibility of SiC compared to Si, this layer could act as a protective shell for biosensors based on Si nanowires transistor.

• Periodical: Materials Science Forum (Volumes 740-742)
• Pages: 306-310
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.740-742.306
• Online since: January 2013
• Authors: Maelig Ollivier, Laurence Latu-Romain, Arnaud Mantoux, Mickaël Martin, Thierry Baron, Véronique Soulière, Gabriel Ferro, Edwige Bano
• Keywords: Biocompatibility, Carburization, Core/Shell, Epitaxy, FIB-SEM, Nanowire, Silicon Carbide (SiC)

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