Plasma Treatment of 3C-SiC Surfaces

Giovanni Attolini; P.M. Rotonda; C. Cornelissen; Margherita Mazzera; Matteo Bosi

doi:10.4028/www.scientific.net/MSF.740-742.287

Paper Titles

Innovative 3C-SiC on SiC via Direct Wafer Bonding
p.271

Towards Bulk-Like 3C-SiC Growth Using Low Off-Axis Substrates
p.275

Color Chart for Thin SiC Films Grown on Si Substrates
p.279

Defect Generation and Annihilation in 3C-SiC-(001) Homoepitaxial Growth by Sublimation
p.283

Plasma Treatment of 3C-SiC Surfaces
p.287

Structural Characterization of 3C-SiC Grown Using Methyltrichlorosilane
p.291

Monte Carlo Study of the Hetero-Polytypical Growth of Cubic on Hexagonal Silicon Carbide Polytypes
p.295

Post-Growth Process Effect on Hetero-Epitaxial 3C-SiC Wafer Bow and Residual Stress
p.301

Elaboration of Core Si/Shell SiC Nanowires
p.306

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Plasma Treatment of 3C-SiC Surfaces

Plasma Treatment of 3C-SiC Surfaces

Abstract:

Surfaces of cubic silicon carbide (3C-SiC), grown by vapour phase epitaxy with silane and propane as precursors, were treated with plasma to remove residual species deposited during the growth procedure and the sample cooling down, or due to atmospherical contamination. The impurity traces were investigated with optical absorption spectroscopy. No morphology changes due to the plasma exposure were observed.

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Silicon Carbide and Related Materials 2012

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

287-290

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.287

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Online since:

January 2013

Authors:

Giovanni Attolini, P.M. Rotonda, C. Cornelissen, Margherita Mazzera, Matteo Bosi

Keywords:

3C-SiC, FT-IR, Plasma

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