Heteroepitaxial Growth of 3C-SiC on Polar Faces of 6H-SiC Substrates, TEM Investigations

Sergey P. Lebedev; Alexander A. Lebedev; Alla A. Sitnikova; Demid A. Kirilenko; Natasha V. Seredova; Alla S. Tregubova; Mikhail P. Scheglov

doi:10.4028/www.scientific.net/MSF.740-742.267

Paper Titles

Low Temperature Homoepitaxial Growth of 4H-SiC on 4° Off-Axis Carbon-Face Substrate Using BTMSM Source
p.247

Morphology Optimization of Very Thick 4H-SiC Epitaxial Layers
p.251

3C-SiC Heteroepitaxy on Hexagonal SiC Substrates
p.257

3C-SiC Growth on (001) Si Substrates by Using a Multilayer Buffer
p.263

Heteroepitaxial Growth of 3C-SiC on Polar Faces of 6H-SiC Substrates, TEM Investigations
p.267

Innovative 3C-SiC on SiC via Direct Wafer Bonding
p.271

Towards Bulk-Like 3C-SiC Growth Using Low Off-Axis Substrates
p.275

Color Chart for Thin SiC Films Grown on Si Substrates
p.279

Defect Generation and Annihilation in 3C-SiC-(001) Homoepitaxial Growth by Sublimation
p.283

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Heteroepitaxial Growth of 3C-SiC on Polar Faces of...

Heteroepitaxial Growth of 3C-SiC on Polar Faces of 6H-SiC Substrates, TEM Investigations

Abstract:

Abstract Results of an epitaxial growth of 3C-SiC epilayers on Si (0001) and C(000¯1) faces of hexagonal 6H-SiC substrates are described. TEM study of grown layers as well as interface between cubic and hexagonal polytypes is presented. Difference between the layers on the Si and C faces are discussed.

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Silicon Carbide and Related Materials 2012

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

267-270

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.267

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Online since:

January 2013

Authors:

Sergey P. Lebedev, Alexander A. Lebedev, Alla A. Sitnikova, Demid A. Kirilenko, Natasha V. Seredova, Alla S. Tregubova, Mikhail P. Scheglov

Keywords:

3C-SiC, Heteroepitaxial Growth, Sublimation Epitaxy, TEM

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