Defect Revelation and Evaluation of 4H Silicon Carbide by Optimized Molten KOH Etching Method

Lin Dong; Liu Zheng; Xing Fang Liu; Feng Zhang; Guo Guo Yan; Xi Guang Li; Guo Sheng Sun; Zhan Guo Wang

doi:10.4028/www.scientific.net/MSF.740-742.243

Paper Titles

Surface Preparation of 4° Off-Axis 4H-SiC Substrate for Epitaxial Growth
p.225

Study of the Effects of Growth Rate, Miscut Direction and Postgrowth Argon Annealing on the Surface Morphology of Homoepitaxially Grown 4H Silicon Carbide Films
p.229

Amorphous Silicon Carbide Film Formation at Room Temperature by Monomethylsilane Gas
p.235

10 × 100 mm 4H-SiC Epitaxial Growth by Warm-Wall Planetary Reactor
p.239

Defect Revelation and Evaluation of 4H Silicon Carbide by Optimized Molten KOH Etching Method
p.243

Low Temperature Homoepitaxial Growth of 4H-SiC on 4° Off-Axis Carbon-Face Substrate Using BTMSM Source
p.247

Morphology Optimization of Very Thick 4H-SiC Epitaxial Layers
p.251

3C-SiC Heteroepitaxy on Hexagonal SiC Substrates
p.257

3C-SiC Growth on (001) Si Substrates by Using a Multilayer Buffer
p.263

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Defect Revelation and Evaluation of 4H Silicon...

Defect Revelation and Evaluation of 4H Silicon Carbide by Optimized Molten KOH Etching Method

Abstract:

We have studied the defects on 4H-SiC substrates and epilayers by using molten KOH defect selective etching. It is found that adding Na₂O₂ into molten KOH at the etched temperature enables the revelation of dislocations on n⁺ and semi-insulating substrates, whereas purely molten KOH is sufficient to obtain good etched pattern on p⁺ substrates. Related statistical data on dislocation densities of n⁺, p⁺ and semi-insulating substrates are also presented. The morphological defects commonly observed on the epilayers are finally investigated and it is shown that some important structural features can be revealed by molten KOH method.