Fabrication and Characterization of CuInS₂ Sensitized TiO₂ Electrodes Based on Improved SILAR Process

Abstract:

CuInS₂ quantum dots have been deposited onto mesoporous TiO₂ films on TCO glass substrate via successive ionic layer absorption and reaction process (SILAR) by using three different routes and post-deposition annealing in sulfur ambiance. The influence of the deposition sequence of the In-S and Cu-S on the microstructure of CuInS₂ sensitized TiO₂ electrodes and the photovoltaic performance of the solar cells have been investigated. The microstructure of CuInS₂ sensitized TiO₂ electrodes has been investigated by using X-ray diffraction (XRD), Raman spectra, scanning electron microscopy (SEM), and energy dispersive spectroscopy (EDS) analysis. The optical absorption property of the electrodes has been detected by using UV-Vis spectroscopy, and the photovoltaic performance of CuInS₂ quantum dots sensitized solar cells has been determined by cyclic voltammetry measurement. It has been found that when the Cu-S was deposited prior to In-S, the chalcopyrite phase CuInS₂ could not be observed due to the sublimation of InxS during the annealing under low pressure. A small amount of CuInS₂ has been detected when In-S and Cu-S was deposited alternately onto the TiO₂ films. However, chalcopyrite phase CuInS₂ can be obtained when In-S was deposited prior to Cu-S, and a relative high efficiency of ca. 0.92% (V_oc = 0.35V, J_sc = 8.49 mA·cm^-2, FF = 0.31) has been achieved via SILAR without KCN treatment and rapid thermal annealing.

• Periodical: Materials Science Forum (Volumes 745-746)
• Pages: 478-484
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.745-746.478
• Online since: February 2013
• Authors: Feng Jiao Mei, Qing Cui Wan, An Ping, Hua Liao, Xue Qing Xu, Ji Fu Shi, Gang Xu
• Keywords: CuInS₂ Quantum Dots, Deposition Sequence TiO₂ Electrodes, SILAR, Solar Cell

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