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Purification of Silicon Using the Liquid Phase Migration Technique under Temperature Gradient

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Abstract:

A new conceptual technique for solar grade silicon (SOG-Si) purification was proposed in the present work. Most impurity elements in metallurgical grade silicon (MG-Si) exist in the grain boundary phases and their contents inside of silicon grains are extremely small, which is resulted from significant segregation during the solidification. Thus, the excellent purification was expected by selective ejection of grain boundary phases from silicon matrix. Such phases can be melted above the eutectic temperature of the system to form impurity-enriched liquid phase. In order to achieve the selective ejection of the liquid phase, its migration in the silicon matrix was investigated by conducting the heat treatment of silicon under the temperature gradient in this paper.

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Periodical:

Materials Science Forum (Volume 750)

Pages:

240-243

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.750.240

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Online since:

March 2013

Authors:

Kunitoshi Matsunaga, Takeshi Yoshikawa, Kazuki Morita

Keywords:

Liquid Phase Migration, Purification, Solar Grade Silicon, Temperature Gradient

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© 2013 Trans Tech Publications Ltd. All Rights Reserved

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